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Preliminary Technical Information
GenX3TM A3-Class IGBTs
Ultra-Low Vsat PT IGBTs for up to 3kHz Switching
IXGK120N120A3 IXGX120N120A3
VCES = 1200V IC110 = 120A VCE(sat) 2.20V
TO-264 (IXGK)
Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C ( Chip Capability ) TC = 110C Terminal Current Limit TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 1 Clamped Inductive Load TC = 25C
Maximum Ratings 1200 1200 20 30 240 120 75 600 ICM = 240 @ 0.8 * VCES 830 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C C C Nm/lb.in. N/lb. g g Features Optimized for Low Conduction Losses Square RBSOA High Avalanche Capability International Standard Packages Advantages
G C E (TAB) G C E E (TAB)
PLUS 247TM (IXGX)
G = Gate C = Collector
E = Emitter TAB = Collector
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque ( IXGK ) Mounting Force ( IXGX ) TO-264 PLUS247
300 260 1.13/10 20..120/4.5..27 10 6
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VCE = 0V = 1mA, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 100A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max. 1200 3.0 5.0 V V
High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
VCE = VCES, VGE = 0V
50 A 3 mA 400 nA 1.85 2.20 V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS99977(02/09)
IXGK120N120A3 IXGX120N120A3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.15 Inductive load, TJ = 125C IC = 100A, VGE = 15V VCE = 960V, RG = 1 Note 2 Inductive load, TJ = 25C IC = 100A, VGE = 15V VCE = 960V, RG = 1 Note 2 IC = IC110, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1 MHz IC = 60A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 45 73 9900 655 240 420 70 180 40 67 10 490 325 33 30 75 15 685 680 58 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.15 C/W C/W PLUS 247TM (IXGX) Outline TO-264 (IXGK) Outline
Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. 2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES, Higher TJ or Increased RG.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter)
Dim.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXGK120N120A3 IXGX120N120A3
Fig. 1. Output Characteristics @ 25C
240 220 200 180 VGE = 15V 13V 11V 360 320 280 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5
9V
240 9V 200 160 120 80 40 0 7V
7V
5V 0 1 2 3 4 5 6 7 8 9 10
3.0
3.5
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
240 220 200 180 VGE = 15V 13V 11V 1.6 1.5 1.4
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 240A
VCE(sat) - Normalized
IC - Amperes
160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5V 7V 9V
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 I
C
I
C
= 120A
= 60A
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.0 5.5 5.0 4.5 TJ = 25C 200 180 160 140
Fig. 6. Input Admittance
IC - Amperes
VCE - Volts
4.0 3.5 3.0 2.5 2.0 1.5 1.0 6 7 8 9 10 11 12 13 14 15 60A 120A I
C
120 100 80 60 40 20 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 TJ = 125C 25C - 40C
= 240A
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N120A3 IXGX120N120A3
Fig. 7. Transconductance
120 110 100 90 25C 125C TJ = - 40C 16 14 12 VCE = 600V I C = 120A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100
VGE - Volts
160 180 200
10 8 6 4 2 0
120
140
0
50
100
150
200
250
300
350
400
450
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
100,000 280
Fig. 10. Reverse-Bias Safe Operating Area
f = 1MHz
240
Capacitance - PicoFarads
Cies 10,000
200
IC - Amperes
160 120 80 40
1,000
Coes
TJ = 125C RG = 1 dV / dt < 10V / ns
Cres 100 0 5 10 15 20 25 30 35 40 0 200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N120A3(9P)2-19-09
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
90 80 70 Eoff VCE = 960V Eon 36 90 80 70 Eoff
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
20 Eon
---
32 28
----
TJ = 125C , VGE = 15V
RG = 1 , VGE = 15V VCE = 960V
18 16 14
Eoff - MilliJoules
Eoff - MilliJoules
60 50 40 30 20 10 0 50 55 60 65 70 75 80 85 90 95 TJ = 25C TJ = 125C
E
Eon - MilliJoules
60 50 40 30 20 10 1 2 3 4 5 6 7 8 9 10 I C = 50A I
C
24 = 100A 20 16 12 8 4
on 12 10 8 6 4 2 100
- MilliJoules
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
90 80 70 Eoff VCE = 960V Eon 20 900 850 800
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
1500
---I C = 100A
RG = 1 , VGE = 15V
18 16 14 12 10 8 I C = 50A 6 4 2 125
tf
VCE = 960V
td(off) - - - I
C
1400 = 50A 1300
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
Eoff - MilliJoules
60 50 40 30 20 10 0 25 35 45 55 65 75 85 95 105 115
t f - Nanoseconds
750 700 650 600 550 500 450 400 1 2 3 4 5 6 7 8 9 10 I = 50A I
C
1200 1100 1000 = 100A 900 800 700 600 500
Eon - MilliJoules
C
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
1000 900 800 1200 900 800 700
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
1150
tf
VCE = 960V
td(off) - - - -
1100 1000
tf
VCE = 960V
td(off) - - - -
RG = 1 , VGE = 15V
RG = 1 , VGE = 15V
1050 950 850
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
700 600 500 400 300 200 100 50 55 60 65 70 75 80 85 90 95 TJ = 25C TJ = 125C
900 800 700 600 500 400 300 100
t f - Nanoseconds
600 I C = 50A, 100A 500 400 300 200 100 25 35 45 55 65 75 85 95 105 115
750 650 550 450 350 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N120A3 IXGX120N120A3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
160 140 120 90 110 100 90
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
60
tr
VCE = 960V
td(on) - - - I = 100A
80 70 60 50 40
tr
VCE = 960V
td(on) - - - -
55 50
TJ = 125C, VGE = 15V
RG = 1 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
C
80 70 60 50 40 30 20 50 55 60 65 70 75 80 85 90 95 TJ = 125C, 25C
45 40 35 30 25 20 15 100
100 80 60 40 20 0 1 2 3 4 5 6 7 8 9 10 I
C
= 50A
30 20 10
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
100 90 80 54
tr
VCE = 960V
td(on) - - - -
RG = 1 , VGE = 15V
50 46 42
t d(on) - Nanoseconds
t r - Nanoseconds
70 I C = 100A 60 50 40 30 20 25 35 45 55 65 75 85 95 105 115 I
C
38 34 30 = 50A 26 22 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N120A3(9P)2-19-09

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